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发明名称
Methode zur Herstellung eines Feldeffekt-Transistors unter Benutzung eines SOI-Substrates
摘要
申请公布号
DE69800374(D1)
申请公布日期
2000.12.07
申请号
DE19986000374
申请日期
1998.04.22
申请人
SHARP K.K., OSAKA
发明人
SOUTOME, YOSHIHIRO
分类号
H01L21/336;H01L29/786;(IPC1-7):H01L21/336;H01L21/28
主分类号
H01L21/336
代理机构
代理人
主权项
地址
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