| 摘要 |
PURPOSE: A semiconductor laser chip is provided to reduce driving current and to improve high-temperature and high-power behavior by increasing double barrier between an active layer and a clad layer. CONSTITUTION: A first conduction type 1 GaN clad layer(2) is grown epitaxially in a cubic structure on a conduction type 1 GaAs substrate(1). An active layer(3) is prepared on the first clad layer(2) with InGaAlP. A second conduction type 2 GaN clad layer(4) is grown epitaxially on the active layer(3). The active layer(3) can be grown using InGaP, AlGaAsP, InGaAsP, GaAs or InGaAs. Because the clad layer is prepared with GaN, the InGaAlP active layer can oscillates a laser with wavelength shorter than 500nm.
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