SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

PURPOSE: A semiconductor device is provided to improve reliability and integration of the device, by forming an epitaxial layer on an impurity region so that contact margin is increased. CONSTITUTION: A gate insulating layer(33) and a gate electrode(34) are sequentially formed on a substrate(31). The first insulating layer surrounding the gate electrode is formed. An impurity region(38) is formed in the surface of the substrate on both sides of the gate electrode. The first conductive layer of a predetermined thickness is formed on the impurity region. The second insulating layer having a contact hole to which the first conductive layer is exposed, is formed on the entire surface of the resultant structure. The second conductive layer is connected to the impurity region through the first conductive layer after the contact hole is buried.