A METHOD OF FABRICATING SEMICONDUCTOR

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to maintain the size of a contact and to prevent deposition of particles, by forming a uniform silicide layer in a heat treatment process. CONSTITUTION: The first metal layer(23) is deposited on the surface of a semiconductor substrate(21) having a native oxide layer in a state that a predetermined bias voltage is applied to the semiconductor substrate while the native oxide layer is dissociated. The second metal layer(25) of a predetermined thickness is formed on the first metal layer. A heat treatment is performed regarding the semiconductor substrate to form a silicide layer on an interface between the semiconductor substrate and the first metal layer.