| 摘要 |
PROBLEM TO BE SOLVED: To uniformly grow an NSG film using a TEOS material by treating the surface of an upper electrode with plasma of O2 gas, etc., and finally forming the NSG film using the TEOS material. SOLUTION: A layer electrode layer 103 composed of Ti, TiN and Ru is formed by sputtering on a layer insulation film 102 incorporated with capacity contacts 101, a high permittivity film, i.e., (Ba, Sr)TiO3 film 104 is formed by MO-CVD, upper Ru electrodes 105 are formed by sputtering, the surface treatment is made with O2 plasma for 60 sec, and finally an NSG film 106 is formed by CVD to obtain semiconductor memory elements using a TEOS material. This employs the process that the upper electrode surface is treated with O2 plasma after forming the upper electrodes, and hence a layer to be easily uniformly adsorbed to the upper electrode surface can be formed to enable the uniform growth of an NSG film using a TEOS material. |
