发明名称 PLASMA TREATING DEVICE AND METHOD FOR CONTROLLING THE SAME
摘要 PROBLEM TO BE SOLVED: To reduce power consumption, improve uniformity, even if the machining area of an object is large, and achieve machining with high selectivity and aspect ratio by installing a flat plate for introducing electromagnetic waves for generating a plasma at a position, that opposes a substrate and specifying the distance between the flat plate and the substrate. SOLUTION: A substrate 4 is placed on a second plate 3, that is arranged opposite to a first plate 2, is placed in a chamber 1. The interval between the first and second plates 2 and 3 is set to 30 mm or larger, which is equal to the half or less of the maximum diameter of the substrate 4. A plasma 7 is generated in a treatment chamber 6 between the first and second plates 2 and 3. The central part of the first plate 2 has a number of gas holes 2a and is connected to a gas supply means 8, thus forming a so-called shower head. The shower head may be manufactured in one piece with the first plate 2 or may be fitted separately. The shower head is composed, so that a region (shower diameter) where an emission hole 2a for supplying a treatment gas to the first plate 2 exists is set to 30 to 85% of the substrate diameter.
申请公布号 JP2000332000(A) 申请公布日期 2000.11.30
申请号 JP19990142805 申请日期 1999.05.24
申请人 HITACHI LTD 发明人 IKEGAWA MASATO;TAKAHASHI NUSHITO
分类号 H01L21/302;H01L21/205;H01L21/3065;(IPC1-7):H01L21/306 主分类号 H01L21/302
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