发明名称 SINGLE-WAFER SURFACE WORKING DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a single-wafer surface working device which can improve reproducibility of the start of surface working with a new constitution, and accordingly, can control surface working amounts only by the time. SOLUTION: An etching pot 1 is constituted, in such a way that the pot 1 can be filled up with an etchant, and at the same time, can support a silicon wafer 4 on its bottom with the surface to be worked of the wafer 4 upward so that the surface is covered with the etchant. A liquid feeding and discharging block 23 is positioned at a point immediately above the pot 1 or its vicinity and temporarily stores a prescribed amount of etchant. The etchant stored in the block 23 is supplied to the pot 1 by means of an opening/closing means (composed of a valve disc 35, a cylinder 36, and a spring 38), which opens and closes a transfer passage 33 connecting the block 23 to the pot 1.
申请公布号 JP2000331983(A) 申请公布日期 2000.11.30
申请号 JP19990140485 申请日期 1999.05.20
申请人 DENSO CORP 发明人 HOSHINO MITSURU
分类号 H01L21/306;(IPC1-7):H01L21/306 主分类号 H01L21/306
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