| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a p-type semiconductor element with which the surface of a polysilicon layer can be oxidized selectively and, in addition, can suppress the threshold voltage fluctuation of a semiconductor element caused by post-oxidation as much as possible, when the post- oxidation is performed on a gate electrode having a polymetal structure. SOLUTION: A method for manufacturing a p-type semiconductor element includes (A) a step of forming a gate insulating film 22 on the surface of a semiconductor layer, (B) a step of forming a gate electrode 22 composed of a silicon layer 23A containing a p-type impurity and a metallic layer 23C laminated upon the layer 23A (B), and (C) a step of forming an oxide film 24 on the exposed surface of the silicon layer 23A by exposing the gate electrode 23 to steam and a hydrogen gas produced by having upon oxygen gas and the hydrogen gas irradiated with electromagnetic wave, and in addition, suppressing the oxidation of the metallic layer 23C.
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