| 摘要 |
PROBLEM TO BE SOLVED: To restrain junction leakage in a semiconductor device. SOLUTION: A diffusion layer region 131 of a transistor 13, constituting a switch of a memory cell and a storage node 151 constituting one electrode of a capacitor 15 are formed of a thin layer 151a, containing oxygen and a layer 151b in which oxygen is not contained. In a heat treatment process after the storage node 151 is formed, diffusion of N-type impurities in the storage node 151 is restrained by oxygen in the layer 151a containing oxygen, and junction leakage is prevented. |
