| 摘要 |
A system is provided to prepare deionized water having a 100 % saturated concentration of a gas, e.g., nitrogen, at a hot temperature, e.g., 50-85 DEG C, and an attendant pressure, e.g., atmospheric pressure, to clean a semiconductor wafer, e.g., of silicon. The gas concentration of a first deionized water portion having a predetermined concentration of the gas at a cold temperature, e.g., 20-30 DEG C, is adjusted in a gassifier chamber (11) having a pressure pump (17) and a pressure sensor (19), to provide a predetermined undersaturated concentration of the gas at the cold temperature. The temperature of the adjusted gas concentration first water portion is then adjusted by mixing therewith a second deionized water portion having a predetermined concentration of the gas at a predetermined very hot temperature, e.g., 80 DEG C, in a predetermined ratio in a mixer (13) having a temperature sensor (20). The flows of the first and second water portions are controlled by first (12) and second (21) flow controllers, to form a hot bath at the hot temperature having such saturated gas concentration to clean the wafer, e.g., in a cleaning tank (14) under megasonic vibrations. A controller (22) is connected to the pump (17), pressure sensor (19), temperature sensor (20) and first (12) and second (21) flow controllers to control the chamber pressure and the operation of the flow controllers.
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