发明名称 METHOD AND APPARATUS FOR GROWING HIGH QUALITY SINGLE CRYSTAL
摘要 A method for growing a single crystal which comprises contacting a seed crystal (4) to a raw material melt (2) in a crucible (1), characterized in that a blade (5) or a baffle plate is provided in the raw material (2) melt in the crucible (1) and the growing of a single crystal is performed by pulling up the seed crystal with rotating the crucible (1). The method can be used for growing various single crystals including CLBO from a highly viscous melt of a raw material (2) as a high quality and high performance crystal.
申请公布号 WO0071786(A1) 申请公布日期 2000.11.30
申请号 WO2000JP03264 申请日期 2000.05.22
申请人 JAPAN SCIENCE AND TECHNOLOGY CORPORATION;SASAKI, TAKATOMO;MORI, YUSUKE;YOSHIMURA, MASASHI 发明人 SASAKI, TAKATOMO;MORI, YUSUKE;YOSHIMURA, MASASHI
分类号 C30B15/00;C30B15/30;C30B17/00;C30B29/22;C30B29/30 主分类号 C30B15/00
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