METHOD AND APPARATUS FOR GROWING HIGH QUALITY SINGLE CRYSTAL
摘要
A method for growing a single crystal which comprises contacting a seed crystal (4) to a raw material melt (2) in a crucible (1), characterized in that a blade (5) or a baffle plate is provided in the raw material (2) melt in the crucible (1) and the growing of a single crystal is performed by pulling up the seed crystal with rotating the crucible (1). The method can be used for growing various single crystals including CLBO from a highly viscous melt of a raw material (2) as a high quality and high performance crystal.
申请公布号
WO0071786(A1)
申请公布日期
2000.11.30
申请号
WO2000JP03264
申请日期
2000.05.22
申请人
JAPAN SCIENCE AND TECHNOLOGY CORPORATION;SASAKI, TAKATOMO;MORI, YUSUKE;YOSHIMURA, MASASHI