| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device capable of surface emission in a constitution different from prior art and a method of manufacturing the same. SOLUTION: In this semiconductor light emitting device 1, a first conductive semiconductor layer and a second conductive semiconductor layer 14, 18 are provided on a main surface of a substrate 10. An active layer 16 is provided so that carrier injection generates light and interposed between the first conductive semiconductor layer and the second conductive semiconductor layer 14, 18. A two-dimensional diffraction grating 24 is provided so as to determine the wavelength of light to be generated in the active layer 16 and extends along the direction in which the main surface of the substrate 10 extends. As a result, the light generated in the active layer 16, whose wavelength is determined by the two-dimensional diffraction grating 24, is emitted from a light emitting surface 26. The light emitting surface 26 is provided along a direction in which the two-dimensional diffraction grating 24 extends.
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