发明名称 Apparatus and process for producing crystal article
摘要 In order to prevent a region of supercooling from increasing and to effect uniform crystal growth, the generation of latent heat is detected from changes in temperature of a crucible or a heater or from changes in heat flow rate and also the position of solid-liquid interface is mathematically found, to control the crucible-descending rate or temperature distribution so that the crystal growth rate can be kept at a predetermined value. <IMAGE>
申请公布号 EP1022362(A3) 申请公布日期 2000.11.29
申请号 EP20000100988 申请日期 2000.01.19
申请人 CANON KABUSHIKI KAISHA 发明人 AMEMIYA, MITSUAKI
分类号 C30B11/00 主分类号 C30B11/00
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