发明名称 |
Method for forming integrated circuit capacitor and memory |
摘要 |
A method for etching a feature in a platinum layer 834 overlying a second material 818 without substantially etching the second material. The method includes the the steps of: forming an adhesion-promoting layer 824 between the platinum layer and the second material; forming a hardmask layer 829 over the platinum layer; patterning and etching the hardmask layer in accordance with desired dimensions of the feature; and etching portions of the platinum layer not covered by the hardmask layer 832, the etching stopping on the adhesion-promoting layer. In further embodiments the adhesion-promoting and hardmask layers are Ti-Al-N including at least 1% of aluminum.
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申请公布号 |
US6153490(A) |
申请公布日期 |
2000.11.28 |
申请号 |
US19980105738 |
申请日期 |
1998.06.26 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
XING, GUOQIANG;SUMMERFELT, SCOTT R.;KHAMANKAR, RAJESH |
分类号 |
H01L21/02;H01L21/3213;H01L21/8242;(IPC1-7):H01L21/20;H01L21/00;H01L21/824;H01L21/44;H01L21/302 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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