发明名称 |
Memory cell incorporating a chalcogenide element |
摘要 |
A memory cell incorporating a chalcogenide element and a method of making same is disclosed. In the method, a doped silicon substrate is provided with two or more polysilicon plugs to form an array of diode memory cells. A layer of silicon nitride is disposed over the plugs. Using a poly-spacer process, small pores are formed in the silicon nitride to expose a portion of the polysilicon plugs. A chalcogenide material is disposed in the pores by depositing a layer of chalcogenide material on the silicon nitride layer and planarizing the chalcogenide layer to the silicon nitride layer using CMP. A layer of TiN is next deposited over the plugs, followed by a metallization layer. The TiN and metallization layers are then masked and etched to define memory cell areas.
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申请公布号 |
US6153890(A) |
申请公布日期 |
2000.11.28 |
申请号 |
US19990374378 |
申请日期 |
1999.08.13 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
WOLSTENHOLME, GRAHAM R.;GONZALEZ, FERNANDO;ZAHORIK, RUSSELL C. |
分类号 |
H01L21/285;H01L21/768;H01L21/8229;H01L27/102;H01L27/24;(IPC1-7):H01L47/00 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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