| 摘要 |
PROBLEM TO BE SOLVED: To effectively prevent the stripping of CVD-film without treatment for roughening the surface by an abrasive by controlling the thickness and average surface roughness of a SiC coating to be in each specified range, while SiC coating is coated on a SiC-impregnated SiC jig using a low pressure CVD device in the semiconductor production process. SOLUTION: The thickness of the SiC coating is 20 to 150μm, preferably 40 to 70μm, and the average surface roughness Ra is 1.5 to 5.0μm, further preferably, the maximum surface roughness Rmax is 2.0 to 3.0μm. The SiC jig A is obtained by coating a CVD-SiC coating film 2 onto the surface of a SiC-impregnated SiC base material 1, and the adhesion of the coating film 2 to a CVD-film 4 such as Si3N4 which is formed on the coating film 2 is improved due to the surface roughness (unevenness) of the coating film 2. In the process for forming the SiC coating film 2 on the surface of the SiC-impregnated SiC base material, it is preferable that the SiC coating film 2 is formed by introducing source compounds for forming the SiC coating film into a low pressure CVD device and coating at 1,000 to 1,270 deg.C and 20 to 300 Torr in a non-oxidizing atmosphere.
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