| 摘要 |
PROBLEM TO BE SOLVED: To obtain a single crystal low in dispersion in the plane of resistivity by providing a cooling means surrounding the growing area of a single crystal rod to increase the temp. gradient of the surface of a molten part and activate flow at the inside of the molten part when the semiconductor single crystal is produced by a floating zone melting method. SOLUTION: A piping 9 is made of copper which is a material high in thermal conductivity, and the pipe 9a disposed at the inlet side and the piping 9b disposed at the outlet side of the piping 9 are each supported by a crystal growing furnace 1A and perforate the crystal growing furnace 1A. The piping 9a and the piping 9b are connected to a cooling fluid source and a discharging path, respectively. The piping 9a is supported by the crystal growing furnace 1A positioning at the upper side than the crystal growing furnace 1A supporting the piping 9b, and the cooling fluid enters from the piping 9 close to the interface 13 of the single crystal rod 43 and flows successively downward while cooling. As the single crystal rod 43A close to the interface 13 is first cooled by the cooling fluid from the piping 9a, the temp. gradient of the surface of a molten part 39A can be made large.
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