DYNAMIC RANDOM ACCESS MEMORY CELL CAPACITOR AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A method for manufacturing a dynamic random access memory(DRAM) cell capacitor is provided to eliminate a lift-up problem of silicon remaining in a step portion after an etch process for an isolation, to reduce the number of photolithography processes, and to prevent a misalignment between a storage electrode and a lower electrode contact of the cell capacitor. CONSTITUTION: A first insulating layer is formed on a semiconductor substrate(100). A first conductive layer and a second insulating layer are sequentially formed on the first insulating layer. The first conductive layer and second insulating layer are etched to form a first opening self-aligned with an active region(102). A first capacitor dielectric layer is formed inside the first opening. A second conductive layer is formed on the first capacitor dielectric layer. The first capacitor dielectric layer and second conductive layer are etched to form a spacer on a sidewall of the first opening. The first insulating layer formed under the first opening is etched by using the spacer as a mask to form a second opening. A third conductive layer is formed in the first and second openings.