摘要 |
PROBLEM TO BE SOLVED: To decrease connection failure of a bump to an electrode layer by forming a flat face of the surface of the bump and the surface of an insulating layer and forming a protective layer on the flattened surface which covers the conductive material layer of the bump and which is less oxidative than the conductive material layer. SOLUTION: A bump 24 is formed on a lifting layer 25 which is connected to the center end 19a of a coil layer 19 through a lead layer 22 in an inductive head H4 for writing. The bump 24 is formed by laminating a Ni layer 24b as a protective layer on the surface of a Cu layer 24a as a conductive material layer, and the part exposed on the surface of an insulating layer 23 is made flat in the same level as the surface of the insulating layer 23. Then an electrode layer 26 is formed by plating on the flat face 24c to electrically connect. An oxide film is formed due to exposure of the flat face 24c to air in the period after the flat face 24c of the bump 24 is formed till the electrode layer 26 is formed, but the thickness of the oxide film is at most 3.0 nm. Therefore, the surface of the oxide film is scraped off to about 3.0 nm depth or more by a dry etching method such as ion milling and reverse sputtering. |