| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacture of a semiconductor element which makes it possible to easily form an episilicon layer while preventing the loss and crystal lattice collapse of a substrate due to etching in spacer formation when an upper-layer source/drain area is formed. SOLUTION: A gate oxide film 23, a gate 24, and a mask insulating film 25 are formed on a semiconductor substrate 21 and a 125th and a 2nd insulating film 27 are formed in order over the entire surface. A 2nd insulating film 27 is etched to form a 1st spacer 27a on a side-wall and the 1st insulating film 26 is etched by being undercut to expose the substrate 21 on both sides of the 1st spacer 27a and the top surface of the mask insulating film 25, so that the 1st insulating film 26 is left as a 2nd spacer 26a on a gate 23 and the side- wall of the mask insulating film 25. On the exposed substrate 21, the episilicon layer 28 is formed, impurity ions are implanted into it, and a heat treatment is carried out to form an upper-layer source/drain area 29.
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