| 摘要 |
The method and installation for treatment of a substrate (14) comprises a column (1) for the generation and orientation of at least one beam (42) of charged particles to the surface of substrate, means (44) for the neutralization of the beam mounted in the path of the beam and producing a cloud (54) of neutralizing particles with charge of opposite sign to that of the beam particles. The beam (42) traverses the cloud (54) and is transformed to a beam (43) at least partly constituted by electrically neutral particles which bombard the surface (23) of the substrate (14) for the purpose of treatment. The installation also comprises means (31) positioned in the vicinity of the substrate surface (23) for the detection of secondary particles of the same nature as the neutralizing particles for the purpose of imaging; the neutralization means (44) are positioned up-path from the detection means (31) so that the cloud (54) of neutralizing particles does not interfeere with either the detection means or the second particles. The neutralization means (44) comprise a source in dark chamber, an electrode (51) for the attraction of neutralizing particles, and a cylinder (45) made of conducting material forming the Faraday cage with axis in the beam direction. The detection means (31) comprise a screen for the protection from photons emitted by the source of neutralizing particles. A voltage source (53) is connected to the electrode (51) for the application of a voltage as low as possible for the extraction of neutralizing particles from the source, and the voltage is in the range 0.1-10 V. In the second embodiment, the neutralization means (44) are positioned in the treatment chamber (12), that is down-path from the column (1). The beam particles are monoatomic ions as e.g. positive gallium ions. The neutralizing particles are monoatomic ions. The installation also comprises micro-machining means (38) for the injection of treatment gas, and means (6,7) for the acceleration of the beam particles to obtain an incident energy of neutral particles greater than 20 keV, of the order of 30 keV. The beam (43) of neutral particles acts on a submicrometric zone of the substrate surface (23), and the substrate (14) is an integrated circuit with at least one nonconducting part.
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