| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which suppresses device characteristics from varying. SOLUTION: The method is to form a compd. semiconductor device on a GaAs substrate 12. An SiN film is formed on the GaAs substrate 12 and etched to form openings for forming electrodes, wherein prior to forming the SiN film an AlGaAs layer having an etching rate higher than the GaAs substrate but lower than the SiN film is epitaxially grown as an etching stopper layer 50 on the substrate 12. The SiN film is formed on the stopper layer, the SiN film on electrode forming regions is etched down to the stopper layer to form first openings for exposing the stopper layer on the electrode forming regions, and the stopper layer exposed in the first openings is etched and removed to provide second openings for exposing the GaAs substrate, thus forming electrode forming openings with the first and second openings.
|
