FABRICATION OF GROUP III NITRIDE BASED COMPOUND SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To fabricate a group III nitride based compound semiconductor element having good crystal structure by forming an underlying layer containing at least one kind of compound selected from titanium nitride, hafnium nitride, zirconium nitride, and tantalum nitride. SOLUTION: From the results on table 1, a GaN layer excellent in crystal structure is obtained regardless of the thickness of titanium nitride and AlN layer. In other words, an underlying layer containing at least one kind of compound selected from titanium nitride, zirconium nitride, hafnium nitride, and tantalum nitride is formed. When a first group III nitride based compound semiconductor (buffer layer) is formed thereon by MOCVD or sputtering, a second group III nitride based compound semiconductor (element function part) can be grown thereon with good crystallinity regardless of the thickness thereof. When currents of 20, 50, 100 mA are fed to a light emitting diode 10 having structure as shown in Fig. 8, emission (EL spectrum) as shown in Fig. 9 is realized.