发明名称 SEMICONDUCTOR IMPURITY STANDARD SAMPLE AND ITS MANUFACTURING METHOD, AND METHOD FOR ANALYZING SEMICONDUCTOR SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To obtain a stable value as a calibration value and at the same time achieve accurate analysis by depositing an impurity to the surface of a semiconductor substrate in a layer or particles and retaining the form of the impurity. SOLUTION: A standard sample used for calibrating analysis needs to be in a form where an impurity in the same form as a sample to be analyzed is deposited. Also, the form of the impurity deposited to the standard sample should not deteriorate with time and should be retained, thus improving reliability as a semiconductor impurity standard sample for calibration. When a semiconductor substrate that is manufactured as a standard sample can provide a stable value as a standard sample without casing deterioration with time in the form of the deposited impurity when the substrate is stored under a low-temperature environment of 10% RH or less. In this manner, the impurity is deposited to the semiconductor substrate in a specific form, is stored under a specific environment for retaining the form of the impurity by absorbing an organic gas and for preventing the fluctuation of a calibration value due to the deterioration with time as a standard sample for providing a stable value.
申请公布号 JP2000321179(A) 申请公布日期 2000.11.24
申请号 JP19990135214 申请日期 1999.05.17
申请人 SUMITOMO METAL IND LTD 发明人 HORIE HIROSHI;TOKUSHIMA KAORI
分类号 G01N23/223;G01N1/00;G01N1/28;(IPC1-7):G01N1/00 主分类号 G01N23/223
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