发明名称 POSITIVE TYPE RESIST COMPOSITION
摘要 PROBLEM TO BE SOLVED: To make it possible to prevent the occurrence of development defects and to obtain excellent resist pattern profiles and the definition of contact holes by incorporating a resin which contains specific repeating units and is increased in a dissolution rate in an alkaline developer by the effect of an acid and a compound which generates the acid by irradiation with active rays or radiation into the above composition. SOLUTION: This composition contains a resin which contains one kind of the repeating units of formula I and formula II, the repeating units of formula III, formula IV, etc., and is increased in a dissolution rate in the alkaline developer by the effect of the acid a compd. which generates the acid by irradiation with active rays or radiation. In the formulas I to IV, R1 denote hydrogen atoms or methyl groups; R2 denotes 1-4C alkyl group; R3, R4 denote hydrogen atoms, etc.; R5 to R12 denote hydrogen atoms or (substituted) alkyl groups; R denotes a hydrogen atom, etc.; (m) denotes an integer from 1 to 10; X denotes a single bond or bivalent groups, such as (substituted) alkylene group and cyclic alkylene group, which are alone or are combined and are not decomposed by the effect of the acid.
申请公布号 JP2000321771(A) 申请公布日期 2000.11.24
申请号 JP19990127296 申请日期 1999.05.07
申请人 FUJI PHOTO FILM CO LTD 发明人 SATO KENICHIRO;KODAMA KUNIHIKO;AOSO TOSHIAKI
分类号 H01L21/027;C08F220/04;C08F220/18;C08F220/28;C08K5/00;C08L33/02;C08L33/04;G03F7/004;G03F7/039 主分类号 H01L21/027
代理机构 代理人
主权项
地址