| 摘要 |
PROBLEM TO BE SOLVED: To enlarge a dynamic range by setting the potential of a barrier gate part as different values at the time of light reception integration and at the time of reset. SOLUTION: A solid image pickup element is constituted by forming plural SFG pixel structures 12A on a semiconductor substrate 1, and this SFG pixel structure 12A is provided with a light receiving part 101 constituted of an MOS diode with which a control capacity C0 (5) is serially connected, a barrier gate part 102 (7) constituted of an MOS diode arranged adjacently to the light receiving part 101, and an MOS transistor 103 whose drain 2 is arranged adjacently to a barrier gate part 102 (7), and whose gate 3 is short-circuited with the light receiving part 101, and whose source 4 is connected with an output line 11. In a method for driving this element, the potential of the barrier gate part 102 (7) is set as different values at the time of light reception integration and at the time of reset. In this case, a bias value is changed by a pulseϕBG23 corresponding to each state of integration, reading, and reset without directly applying the bias to the barrier gate part 102 (7) for increasing the quantity of saturated electric charge.
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