| 摘要 |
PROBLEM TO BE SOLVED: To achieve an infrared detector having a satisfactory characteristic with good reproducibility even in the event of defects of a crystal, in a coping method of a compound semiconductor crystal. SOLUTION: A non-doped HgCdTe crystal is subjected to heating operation for controlling an Hg hole density so that a p-type HgCdTe crystal 1 is formed. Thereafter, the p-type HgCdTe crystal 1 is immersed in a solution containing Ib-group elements, so that the Ib-group elements are doped into the p-type HgCdTe crystal 1. Then, the surface of the p-type HgCdTe crystal 1, in which the Ib-group elements are doped, is removed by 5μm or more.
|
