| 摘要 |
PROBLEM TO BE SOLVED: To prevent a parasitic current flowing from a sense cell to an adjacent main cell in the lateral direction by providing an inactive cell between the sense cell and the main cell. SOLUTION: In the semiconductor device, an inactive cell is provided between a sense cell and a main cell. More specifically, inactive cells are formed in rectangular annular shape around a sense cell. An n+ type layer 6 of the same conductivity type as a substrate 1 and serving as a source is not formed in the inactive cell. The p-type layers 5 of the inactive cells are formed in rectangular annular shape around the sense cell while being interconnected and connected with the source line 9 of the main cell and fixed at the ground potential. The p-type layer 5 of the inactive cell may be connected with the source line 8 of the sense cell. According to the structure, a parasitic current flowing from the sense cell to an adjacent main cell in the lateral direction can be blocked when the source potential of the sense cell is increased by the potential difference of the sense resistance.
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