| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film magnetic head in which a crystalline layer is not generated on a surface facing a magnetoresistive element of a shielding layer, degradation of magnetic characteristic can be prevented and effective gap length is easily controlled. SOLUTION: An insulating layer (an upper gap layer) 56 is interposed between a GMR element (magnetoresistive element) 45 and an upper shielding layer 57 and an insulating layer 54d is interposed between the GMR element (magnetoresistive element) 45 and a lower shielding layer 53, respectively. The shielding layers 57, 53 are constituted of an amorphous structure and further a surface of the lower shielding layer 53 facing the GMR element 45 is covered with a crystallization preventing film 54a of the shielding layer.
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