发明名称 |
SEMICONDUCTOR MEMORY |
摘要 |
A semiconductor memory using two transistors, which can be densely packed. A vertical transistor as a write element is stacked on another transistor as a read transistor formed on a substrate and using the lower electrode of the vertical transistor as its gate. The two transistors are field-effect transistors having opposite conductivity types, which allow complimentary operations of memory cells, resulting in a semiconductor memory having desired characteristics and high packing density.
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申请公布号 |
WO0070683(A1) |
申请公布日期 |
2000.11.23 |
申请号 |
WO2000JP03019 |
申请日期 |
2000.05.11 |
申请人 |
HITACHI, LTD.;HISAMOTO, DAI;KATAYAMA, KOZO |
发明人 |
HISAMOTO, DAI;KATAYAMA, KOZO |
分类号 |
G11C11/404;H01L21/8234;H01L21/8242;H01L27/06;H01L27/108;H01L27/12;H01L29/08;(IPC1-7):H01L27/108;G11C11/402 |
主分类号 |
G11C11/404 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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