发明名称 SEMICONDUCTOR MEMORY
摘要 A semiconductor memory using two transistors, which can be densely packed. A vertical transistor as a write element is stacked on another transistor as a read transistor formed on a substrate and using the lower electrode of the vertical transistor as its gate. The two transistors are field-effect transistors having opposite conductivity types, which allow complimentary operations of memory cells, resulting in a semiconductor memory having desired characteristics and high packing density.
申请公布号 WO0070683(A1) 申请公布日期 2000.11.23
申请号 WO2000JP03019 申请日期 2000.05.11
申请人 HITACHI, LTD.;HISAMOTO, DAI;KATAYAMA, KOZO 发明人 HISAMOTO, DAI;KATAYAMA, KOZO
分类号 G11C11/404;H01L21/8234;H01L21/8242;H01L27/06;H01L27/108;H01L27/12;H01L29/08;(IPC1-7):H01L27/108;G11C11/402 主分类号 G11C11/404
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