| 摘要 |
A satisfactory conductive fill of a vertical trench of aspect ratio of at least 20 to 1 in a silicon substrate is obtained by heating the substrate to a temperature of about 375 DEG C or less in a chamber for chemical vapor deposition along with a mixture of WF6, H2, and SiH4 for filling the trench with tungsten. Also, W(CO)6 may be substituted for the WF6. |
