| 摘要 |
A method for etching an article containing a crystal while immersing it in an acid liquid at an etching rate higher than the crystal growth rate of the article. An article processed by the etching method is also disclosed. The etching rate is calculated by performing a preliminary etching step where the article is immersed in an acid liquid, and the etching time for which the etching is conducted is determined from the calculated etching rate. The article is immersed in the acid liquid for the determined time to perform the etching step. The etching rate is higher than the crystal growth rate of the article. |
