| 摘要 |
<p>A method for chemical vapor deposition of a film comprising tantalum onto a substrate includes introducing into a deposition chamber: (i) a substrate; (ii) a source precursor in the vapor state; and (iii) a reactant gas, and maintaining the temperature of the substrate within the chamber as from about 70°C to about 675°C for a period of time sufficient to deposit a film comprising tantalum on the substrate. The source precursor has a formula (I): Ta(F5-q-p)(Xq-p)(Rp) wherein X is selected from the goup consisting of bromine, iodine, chlorine, and combinations thereof; q is an integer from 0 to 4; p is an integer from 0 to 4; and R is selected from the goup consisting of hydrogen and lower alkyl.</p> |
