| 摘要 |
<p>A layer comprising silicon oxide (SiO2) is formed on (111) plane of a silicon (Si) substrate in a striped pattern which is longer in the Ä1-10Ü axis direction perpendicular to the Ä110Ü axis direction. Then a group III nitride compound semiconductor represented by a general formula AlxGayIn1-x-yN (0</=x</=1, 0</=y</=1, 0</=x+y</=1) is laminated thereon. The group III nitride compound semiconductor represented by a general formula AlxGayIn1-x-yN (0</=x</=1, 0</=y</= 1, 0</=x+y</=1) grows epitaxially on the substrate-exposed regions B which are not covered by the SiO2 layer, and grows epitaxially on the SiO2 layer in lateral direction from the regions B. Consequently, a group III nitride compound semiconductor having no dislocations can be obtained. <IMAGE> <IMAGE></p> |
