Process for building in slits in silicon wafers comprises producing hole structures longitudinal to the slits by pore etching, and connecting the hole structures to the slits by chemical etching

摘要

Process for building in slits in silicon wafers comprises initially producing narrow neighboring hole structures longitudinal to the slits by pore etching, and subsequently connecting the hole structures to the slits by chemical etching. Preferred Features: The hole structures are produced by electrochemical pore etching. The hole structures are connected to the slits by slow chemical etching. The process uses slow alkaline etching by means of a 2% KOH etch at room temperature for 100 about hours.