| 摘要 |
PURPOSE: A horizontal reactor for manufacturing a compound semiconductor is provided to grow an epitaxial thin film of a high quality by inducing laminar flow of a source gas on a substrate. CONSTITUTION: A susceptor(6) supports a reaction gas source supply portion(9) and a substrate(17) formed with a semiconductor layer. An outer wall(2) maintains a pressure of reaction gas. An inner wall(3) induces laminar flow. A magnetic fluid power transmission portion(8) rotates the susceptor(6). An RF(Radio Frequency) heater(12) heats the substrate(17). A reaction gas exhaust portion(13) exhausts the reaction gas from a reactor(1) to the outside. The reactor(1) is connected with a substrate loading chamber(15) by a gate valve(14).
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