METHOD FOR MANUFACTURING METAL CONTACT OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a metal contact of a semiconductor device is provided to stably prevent a diffusion from a contact part to the inside of silicon metal by forming a monocrystal cobalt silicide layer on an interface between a silicon layer and a cobalt layer. CONSTITUTION: A contact window is formed on an insulating layer. A titanium layer(23), a cobalt layer(25) and a titanium nitride layer(24) are sequentially stacked. An annealing process is performed to form a cobalt silicide layer(CoSi2)(28) between the titanium layer and a silicon substrate. Tungsten(26) is stacked.