| 摘要 |
PURPOSE: A capacitor is provided to increase a capacity through an effective surface area by preventing a loss of semi-spherical grain film on etch-backing a polysilicon. CONSTITUTION: A capacitor includes the steps of forming first and second gates to be apart each other on the substrate, forming a contact hole between a first gate and a second gate by etching a part of first to third insulating films formed on the substrate, forming a first polysilicon up to the third insulating in order to fill out the contact hole to generate a phosphor-silicate-glass(PSG) film on the first polysilicon and a first nitride film, making a laminated structure of first nitride film, PSG film and first polysilicon film on the contact hole using a photolithography, etching the PSG film in the laminated structure to forming a second polysilicon film on the etched surface, forming a semi-spherical grain film on the second polysilicon film and doing an etch-back treatment the second polysilicon film, removing the third insulating film, first nitride film and PSG film to form a second nitride film on the side of exposed first and second polysilicon and making oxidation of the second nitride film to form a third polysilicon. The capacitor is prevented from a loss of semi-spherical grain film through deposition and etch-back of polysilicon.
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