METHOD FOR MANUFACTURING SHALLOW JUNCTION AND SILICIDE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a shallow junction and silicide of a semiconductor device is provided to decrease the number of manufacturing processes and to uniformly form a titanium silicide layer in a fine contact size, by simultaneously forming the shallow junction and the titanium silicide layer. CONSTITUTION: After a gate electrode is formed in a metal oxide semiconductor(MOS) transistor region of an isolated silicon wafer(1), a sacrificial oxidation layer(6) is eliminated. An epi-silicon layer(8) doped with p-type or n-type impurities is selectively grown only on an exposed surface of the silicon wafer and an exposed upper part of a gate electrode(3,4). A titanium thin film is stacked on the silicon wafer on which the epi-silicon is selectively stacked. One of arsenic ions, molybdenum ions or tungsten ions is injected into the silicon wafer having the titanium thin film to make the epi-silicon become amorphous. The silicon wafer is annealed to form a titanium silicide while forming a shallow junction of a source and a drain, and the remaining titanium thin film is eliminated.