发明名称 |
X-RAY DETECTOR AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
PURPOSE: An X-ray detector and a method for manufacturing the same are provided to reduce the off-current by restricting the leakage current of a thin film transistor for driving an X-ray detector CONSTITUTION: An X-ray detector and a method for manufacturing the same comprise a photoelectric conversion portion, a charge storage portion and a switching portion. The photoelectric conversion portion receives an X-ray and generates the charge the received capacity. The charge storage portion comprises a first storage electrode, a dielectric layer, a second storage electrode(60), a protection layer and a pixel electrode(62). The switching portion controls an output of the charge stored in the charge storage portion. |
申请公布号 |
KR20000065338(A) |
申请公布日期 |
2000.11.15 |
申请号 |
KR19990011516 |
申请日期 |
1999.04.01 |
申请人 |
LG.PHILIPS LCD CO., LTD. |
发明人 |
KIM, CHANG YEON;KIM, CHANG WON;YOON, JEONG GI;JUNG, YEONG SIK;CHOI, JAE BEOM |
分类号 |
H01L31/115;G01T1/24;H01L21/77;H01L27/12;H01L27/13;H01L27/146;(IPC1-7):H01L31/115 |
主分类号 |
H01L31/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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