METHOD FOR MANUFACTURING METAL INTERCONNECTION OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a metal interconnection of a semiconductor device is provided to improve a characteristic of an interconnection by forming the metal interconnection not by an evaporation method but by a coating method to control a generation of a foreign substance. CONSTITUTION: A wafer(11) is mounted in a rotation unit including a cooling pipe(15) established in a chamber(17). The rotation unit is rotated after aluminum of a liquid state is placed on the wafer, so that the aluminum of a liquid stage is uniformly applied on the wafer. The liquid state aluminum uniformly applied on the entire surface of the wafer is cooled down to form a solid aluminum thin film. The solid aluminum thin film is patterned to form a metal interconnection.