METHOD OF FABRICATING P-BURIED LAYER FOR PNP DEVICE,申请号KR19920009683-传众专利搜索

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发明名称	METHOD OF FABRICATING P-BURIED LAYER FOR PNP DEVICE
摘要
申请公布号	KR100272067(B1)	申请公布日期	2000.11.15
申请号	KR19920009683	申请日期	1992.06.04
申请人	NATIONAL SEMICONDUCTOR CORPORATION	发明人	AMORAK, RAMDE;SHELDON, ARONOWITZ
分类号	H01L21/22;H01L21/265;H01L21/331;H01L21/74;H01L21/761;H01L21/8228;H01L29/73;H01L29/732;(IPC1-7):H01L29/68	主分类号	H01L21/22
代理机构		代理人
主权项
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