| 摘要 |
PURPOSE: A method for manufacturing an asymmetrical salicide layer of a semiconductor device is provided to improve a thermal stability by forming a thick silicide layer on a gate electrode using a conventional salicide process. CONSTITUTION: A gate oxidation layer(6) and a polysilicon layer sequentially stacked on an active region of a semiconductor substrate(2) having a field oxidation layer are patterned to form a gate electrode(8). A spacer insulating layer(12) composed of an insulating material is formed on a sidewall of the gate electrode. A source/drain region(14) is formed by injecting impurity ions into the substrate exposed by the field oxidation layer and spacer insulating layer. After a first metal layer is evaporated on the resultant structure and a first thermal treatment is performed, a metal layer not reacting with silicon is selectively etched by a wet-etching process to form a silicide layer(16a) on both the gate electrode and a source/drain. An insulating layer is evaporated on the resultant structure having the silicide layer, and the insulating layer is planarized to expose an upper surface of the gate electrode. After a second metal layer identical to the first metal layer is evaporated on the resultant structure, a second thermal treatment is performed. And, after the second metal layer is selectively etched by a wet-etching process, a third thermal treatment is performed. A silicide layer thicker than the silicide layer on the source/drain is formed on the gate electrode.
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