METHOD FOR COLLECTING CONTAMINATED SAMPLING MATERIAL ON SURFACE OF SEMICONDUCTOR WAFER

摘要

PURPOSE: A method for collecting a contaminated test sample on a surface of a semiconductor wafer is provided to precisely analyze a degree of contamination of heavy metals included in a silicon nitride layer, by analyzing how much a collected sampling material is contaminated with heavy metals by using a graphite furnace-atomic absorption spectrometer(GF-AAS). CONSTITUTION: A solution for smelting a silicon nitride layer formed on a surface of a semiconductor wafer is contained in a receptacle. The semiconductor wafer is loaded on the receptacle to have the surface of the semiconductor wafer soaked in the solution. The wafer maintains a state that the wafer is loaded on the receptacle for a predetermined interval of time, so that the silicon nitride layer is smelted by the solution. The solution in which the silicon nitride layer is smelted is collected.