METHOD FOR CRYSTALLIZING SILICON THIN FILM, THIN FILM TRANSISTOR THEREBY AND METHOD FOR MANUFACTURING THE THIN FILM TRANSISTOR

摘要

PURPOSE: A method for crystallizing an amorphous silicon thin film is provided to grow a big grain of silicon by improving a pattern of a silicon thin film to extend a liquid state maintaining time while liquid silicon is crystallized. CONSTITUTION: A buffer layer is formed on a substrate. An amorphous silicon thin film is formed which has a first region and a second region on the buffer layer. The first region is a first dimension reaching the central axis, and the second region is a second dimension reaching the central part greater than the first dimension. The buffer layer is over-etched by a dimension which is greater than the first dimension and is less than the second dimension with reference to the amorphous silicon thin film, so that a lower part of the first region contacts a space and the central part of the second region contacts the remaining buffer layer. The amorphous silicon thin film is crystallized.