CIRCUIT BOOSTING VOLTAGE IN SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: A booster circuit of a semiconductor memory device is provided to be capable of effectively decreasing RC delay time by supplying current from both sides of word lines, thereby improving the access speed of the device itself. CONSTITUTION: The semiconductor memory device has a decoder for supplying a voltage to a plurality of bit lines and word lines which are crossed to each other. A first switching part is connected to the respective word lines and is switched in accordance with the voltage supplied from the decoder. A second switching part is coupled in cascade to the first switching part, and is switched in accordance with the switching of the first switching part to supply a booster voltage to respective word lines. Preferably, the first and second switching parts are NMOS.