| 摘要 |
PURPOSE: A chip size package and a method for manufacturing the same are provided to increase a voltage level and reduce a noise by extending an area of a metal layer for grounding and power. CONSTITUTION: A chip size package and a method for manufacturing the same comprise a semiconductor chip, a first insulating layer(21), a metal pattern, a second insulating layer, and a solder ball. The semiconductor chip comprises a pad(11). The first insulating layer is formed on the semiconductor chip to expose the pad. The metal pattern is formed with a metal layer(40) connected with the pad for the power application. The second insulating layer is formed on an upper portion of the above structure to expose a ball land. The solder ball is mounted on an upper portion of the ball land.
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