METHOD FOR FORMING A PATTERN OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A pattern of semiconductor device is provided to decrease a foreign material generated by etching an anti-reflective film to form a desired precise pattern. CONSTITUTION: A pattern of semiconductor device is formed in turn by successively forming an etched film and an anti-reflective film on an upper portion of the semiconductor substrate to form a photosensitive film pattern on the upper portion of the anti-reflective film, etching the etched film and anti-reflective film in turn in the presence of the photosensitive film pattern in a dry etching appliance with CxFy group gases including a nitrogen gas and oxygen gas, and removing the anti-reflective film and a reactive product by cleaning after removal of the photosensitive film pattern. In the etching of the etched film and anti-reflective film, an amount of polymer generated by etching, in particular, the anti-reflective film can be controlled to prevent a pattern failure on etching the following etched film and control pattern dimensions.