发明名称 TRANSFER GATE TYPE ADDER OF LOW POWER SOURCE SEMICONDUCTOR CIRCUIT
摘要 PURPOSE: A transfer gate type adder of a low power source semiconductor is provided to make the operation of a full adder to be operated stably in a logic level of 2V by a simple correction without an additional improvement on the process. CONSTITUTION: A transfer gate type adder of a low power source semiconductor realizes a stable circuit operation in a low power source driving of 2V. The circuit comprises: a first inverter(121) inverting a first input data and outputting it to a first node; a first transfer gate(122) transferring a second input data to a second node in response to a signal on the first node and the first input data; a first low power source voltage compensation part(123) applying a voltage of the first node to the second node or outputting the value of the first input data in response to the second input data; a second inverter(124) inverting the voltage level of the first node to the second node in response to the second input data; a second transfer gate(125) transferring a carrier input signal to a data sum output terminal in response to each voltage of the second and the third node; a second low power source voltage compensation part(126) applying the voltage of the third node to the data sum output terminal in response to the carrier input signal or outputting the voltage of the second node; a third transfer gate(127) transferring the carrier input signal to the carrier output terminal in response to the voltage of the second node and the third node; and a fourth transfer gate(128) transferring a second input data value to the carrier output terminal in response to the voltage the second node and the third node.
申请公布号 KR20000066285(A) 申请公布日期 2000.11.15
申请号 KR19990013277 申请日期 1999.04.15
申请人 HYUNDAI ELECTRONICS IND. CO.,LTD 发明人 KIM, NAM HYEON
分类号 G11C11/404;(IPC1-7):G11C11/404 主分类号 G11C11/404
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