SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

PROBLEM TO BE SOLVED: To prevent the increase of manufacturing processes by providing a control gate consisting of impurity layers and a floating gate consisting of conduction layers and overlapping through insulators in a programmable memory cell storing data for relieving a defective memory cell. SOLUTION: In order to store a relief address, an address signal formed by an address buffer circuit is converted to write-in data by a relief address selecting circuit and stored in a non-volatile memory element QE arranged in the relief address storing circuit. In the non-volatile memory element QE, a control gate is constituted of diffusion layers 6, 10, a conduction layers (floating gates) 8, gate insulation films 7 between the control gate and conduction layers 8, and a source and a drain are constituted of an N type diffusion layers 10. The conduction layers 8 uses poly-silicon and is formed simultaneously with the conduction layers 8 used as the gate electrodes of N channel MOSFETQN and P channel MOSFETQP.